IRFB3207ZPBF vs IPB100N12S305ATMA2 Comparación
Comparación detallada lado a lado de IRFB3207ZPBF por Infineon y IPB100N12S305ATMA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB100N12S305ATMA2 - 120V 100A N-Ch MOSFET | Infineon OptiMOS 5
IPB100N12S305ATMA2 ✓ ActivoComparación de especificaciones
| Parámetro | IRFB3207ZPBF | IPB100N12S305ATMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,62 | $1,95 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | OptiMOS 5 120V |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | — |
| Drain-Source Voltage (VDS) | 75 V | 120 V |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Encapsulado | TO-220AB (3-lead through-hole) | — |
| Tipo de montaje | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Nivel MSL | N/A (through-hole) | [DATA_NEEDED: MSL rating] |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Power Dissipation (PD) at Tc | — | 300 W |
| Drain-Source On-Resistance RDS(on) | — | 0.0048 ohm (4.8 mΩ) at VGS=10 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Maximum Junction Temperature | — | 175 °C |
| Avalanche Energy (EAS) | — | 1445 mJ |
| Encapsulado / Carcasa | — | PG-TO263-3-2 (D2PAK) |
| Rango de temperatura de funcionamiento | — | -55 °C to +175 °C (TJ) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Estado RoHS | — | Compliant |