IRFB3207ZPBF vs IPB100N12S305ATMA2 Comparison
Detailed side-by-side comparison of IRFB3207ZPBF by Infineon and IPB100N12S305ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB100N12S305ATMA2 - 120V 100A N-Ch MOSFET | Infineon OptiMOS 5
IPB100N12S305ATMA2 β ActiveSpecification Comparison
| Parameter | IRFB3207ZPBF | IPB100N12S305ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $1.95 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRFB3207ZPBF | β |
| Series | HEXFET | OptiMOS 5 120V |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | β |
| Drain-Source Voltage (VDS) | 75 V | 120 V |
| Continuous Drain Current (ID) at TC=25C | 120 A | β |
| Silicon-Limited Drain Current | 170 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | β |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | β |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissition (PD) at TC=25C | 300 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | TO-220AB (3-lead through-hole) | β |
| Mounting Type | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | β |
| MSL Level | N/A (through-hole) | [DATA_NEEDED: MSL rating] |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | β |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Power Dissipation (PD) at Tc | β | 300 W |
| Drain-Source On-Resistance RDS(on) | β | 0.0048 ohm (4.8 mΞ©) at VGS=10 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Maximum Junction Temperature | β | 175 Β°C |
| Avalanche Energy (EAS) | β | 1445 mJ |
| Package / Case | β | PG-TO263-3-2 (D2PAK) |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (TJ) |
| Automotive Qualification | β | AEC-Q101 qualified |
| RoHS Status | β | Compliant |