IRFB3207ZPBF vs IRF3007STRLPBF Comparación
Comparación detallada lado a lado de IRFB3207ZPBF por Infineon y IRF3007STRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFB3207ZPBF | IRF3007STRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,62 | $0,92 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | — |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | — |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | -55°C to +175°C |
| Encapsulado | TO-220AB (3-lead through-hole) | — |
| Tipo de montaje | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Nivel MSL | N/A (through-hole) | — |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | Yes (Repetitive Avalanche Allowed up to Tjmax) |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-to-Source Breakdown Voltage (V(BR)DSS) | — | 75 V |
| Continuous Drain Current (Id) at Tc=25°C | — | 62 A |
| Pulsed Drain Current (Idm) | — | 250 A |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 12.6 mΩ typical at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 110 nC typical |
| Maximum Power Dissipation (Pd) | — | 120 W at Tc=25°C |
| Thermal Resistance Junction-to-Case (RθJC) | — | 1.0 °C/W |
| Thermal Resistance Junction-to-Ambient (RθJA) | — | 40 °C/W |
| Package Type | — | D2PAK (TO-263), 3-pin (2+Tab), Surface Mount |
| Estado RoHS | — | Compliant (Lead-Free, PBF suffix) |