IRFB3207ZPBF vs IRF3007STRLPBF Comparison
Detailed side-by-side comparison of IRFB3207ZPBF by Infineon and IRF3007STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB3207ZPBF | IRF3007STRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.92 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRFB3207ZPBF | β |
| Series | HEXFET | β |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | β |
| Drain-Source Voltage (VDS) | 75 V | β |
| Continuous Drain Current (ID) at TC=25C | 120 A | β |
| Silicon-Limited Drain Current | 170 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | β |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | β |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissition (PD) at TC=25C | 300 W | β |
| Operating Junction Temperature | -55 C to +175 C | -55Β°C to +175Β°C |
| Package | TO-220AB (3-lead through-hole) | β |
| Mounting Type | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | β |
| MSL Level | N/A (through-hole) | β |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | Yes (Repetitive Avalanche Allowed up to Tjmax) |
| Polarity | β | N-Channel |
| MOSFET Operating Mode | β | Enhancement |
| Drain-to-Source Breakdown Voltage (V(BR)DSS) | β | 75 V |
| Continuous Drain Current (Id) at Tc=25Β°C | β | 62 A |
| Pulsed Drain Current (Idm) | β | 250 A |
| Static Drain-to-Source On-Resistance (RDS(on)) | β | 12.6 mΞ© typical at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | β | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | β | 110 nC typical |
| Maximum Power Dissipation (Pd) | β | 120 W at Tc=25Β°C |
| Thermal Resistance Junction-to-Case (RΞΈJC) | β | 1.0 Β°C/W |
| Thermal Resistance Junction-to-Ambient (RΞΈJA) | β | 40 Β°C/W |
| Package Type | β | D2PAK (TO-263), 3-pin (2+Tab), Surface Mount |
| RoHS Status | β | Compliant (Lead-Free, PBF suffix) |