IRFH5015TRPBF vs IRFR7546TRPBF Comparación
Comparación detallada lado a lado de IRFH5015TRPBF por Infineon y IRFR7546TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFH5015TRPBF | IRFR7546TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,62 | $0,62 |
| FET Type | N-Channel | N-Channel |
| Technology | IR MOSFET (HEXFET) | StrongIRFET |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TA=25C | 10 A | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | [DATA_NEEDED: Qg total] |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| Encapsulado | 8-PQFN (5x6) SuperSO8 | DPAK (TO-252AA) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Configuration | Single with built-in body diode | — |
| Temperatura de funcionamiento | -55C to +150C (TJ max) | — |
| Estado RoHS | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Gate-to-Source Voltage (VGS) | — | 20 V (max) |
| Drain Current (ID) at TC=25C | — | 71 A |
| Continuous Drain Current (ID) at TC=25C (bond-wire limited) | — | 56 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10V | — | 7.9 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Power Dissipation (PD) at TC=25C | — | 99 W |
| Temperatura de unión de funcionamiento | — | -55C to +175C |
| Lead-Free / PBF | — | Yes (TRPBF suffix) |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS single-pulse] |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |