IRFH5015TRPBF vs IRFR7546TRPBF Comparison
Detailed side-by-side comparison of IRFH5015TRPBF by Infineon and IRFR7546TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFH5015TRPBF | IRFR7546TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.62 |
| FET Type | N-Channel | N-Channel |
| Technology | IR MOSFET (HEXFET) | StrongIRFET |
| Drain-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current (ID) at TA=25C | 10 A | β |
| Continuous Drain Current (ID) at TC=25C | 56 A | β |
| On-Resistance (RDS(on)) max | 31 mOhm | β |
| Total Gate Charge (Qg) | 33 nC | [DATA_NEEDED: Qg total] |
| Power Dissipation (TA=25C) | 3.6 W | β |
| Power Dissipation (TC=25C) | 156 W | β |
| Gate Drive Voltage (VGS recommended) | 10 V | β |
| Package | 8-PQFN (5x6) SuperSO8 | DPAK (TO-252AA) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single with built-in body diode | β |
| Operating Temperature | -55C to +150C (TJ max) | β |
| RoHS Status | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Gate-to-Source Voltage (VGS) | β | 20 V (max) |
| Drain Current (ID) at TC=25C | β | 71 A |
| Continuous Drain Current (ID) at TC=25C (bond-wire limited) | β | 56 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10V | β | 7.9 mOhm |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Power Dissipation (PD) at TC=25C | β | 99 W |
| Operating Junction Temperature | β | -55C to +175C |
| Lead-Free / PBF | β | Yes (TRPBF suffix) |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS single-pulse] |
| MSL Level | β | [DATA_NEEDED: MSL rating] |