IRFR3710ZTRLPBF vs IRFR3710ZTRPBF Comparación
Comparación detallada lado a lado de IRFR3710ZTRLPBF por Infineon y IRFR3710ZTRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR3710ZTRLPBF | IRFR3710ZTRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,58 | $0,42 |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide), HEXFET | HEXFET (IR MOSFET) |
| Drain to Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) @ 25C (Tc) | 42 A | — |
| Max Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max @ VGS=10V | 18 mOhm | — |
| Gate-Source Voltage (Vgs) max | [DATA_NEEDED: Vgs max rating] | — |
| Gate Threshold Voltage (Vgs(th) typ) | [DATA_NEEDED: Vgs(th)] | — |
| Total Gate Charge (Qg) | 69 nC | — |
| Power Dissipation (Pd) @ Tc=25C | 140 W | — |
| Avalanche Energy Rating (EAS) | 150 mJ | — |
| Maximum Junction Temperature | 175 C | — |
| Encapsulado | TO-252AA (DPAK), 3-pin (2+tab) | TO-252AA (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per Lisleapex listing) | — |
| Configuration | Single with built-in diode | — |
| Temperatura de funcionamiento | -55 C to +175 C (TJ) | — |
| Estado RoHS | Compliant (Pb-free PBF suffix) | Compliant |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 56 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | — | 18 mOhm |
| Power Dissipation (PD) at TC=25C | — | 140 W |
| Temperatura de unión de funcionamiento | — | -55C to +175C |
| Lead-Free | — | Yes |