IRFR5305TRPBF vs IRFR2405TRPBF Comparación
Comparación detallada lado a lado de IRFR5305TRPBF por Infineon y IRFR2405TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR5305TRPBF | IRFR2405TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,32 | $0,61 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) Max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | 31 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| On-Resistance (RDS(on)) Max at VGS=-10V | 65 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | -2 V to -4 V | — |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25C | 110 W | — |
| Single-Pulse Avalanche Energy (EAS) | 270 mJ | — |
| Rango de temperatura de funcionamiento | -55 C to +175 C | — |
| Encapsulado | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) |
| Nivel MSL | 1 | 1 |
| Estado RoHS | Compliant (Pb-free PBF suffix) | Compliant (Lead-Free PBF suffix) |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 56 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) max at VGS=10V | — | 16 mOhm |
| On-Resistance RDS(on) max at VGS=5V | — | [DATA_NEEDED: RDS(on) at 5V] |
| Total Gate Charge (Qg) | — | 70 nC |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Temperatura de unión de funcionamiento | — | -55C to +175C |
| Recuento de pines | — | 3 (Gate, Drain, Source) + Tab |
| Sin halógenos | — | [DATA_NEEDED: halogen-free status] |
| Avalanche Rated | — | Yes (100% avalanche tested) |