IRFR5410TRPBF vs IRFR1205TRPBF Comparación
Comparación detallada lado a lado de IRFR5410TRPBF por Infineon y IRFR1205TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR5410TRPBF | IRFR1205TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,71 | $0,49 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | 55 V |
| Continuous Drain Current (ID) at TC = 25 °C | -13 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | +/- 20 V |
| Total Gate Charge (Qg) typ | 70 nC | — |
| Encapsulado | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Power Dissition (PD) at TC = 25 °C | 66 W | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C (TJ) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) | HEXFET (IR MOSFET, 5th generation) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 44 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| Gate Threshold Voltage (VGS(th)) | — | 2 V min, 4 V max |
| On-Resistance RDS(on) at VGS=10V | — | 27 mOhm max |
| Total Gate Charge (Qg) | — | 43.3 nC |
| Power Dissition (PD) at TC=25C | — | 107 W |
| Temperatura de unión de funcionamiento | — | -55C to +175C |
| Estado RoHS | — | Compliant (PBF suffix = lead-free) |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen status] |