IRFR5410TRRPBF vs IRLZ34NSTRLPBF Comparación
Comparación detallada lado a lado de IRFR5410TRRPBF por Infineon y IRLZ34NSTRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR5410TRRPBF | IRLZ34NSTRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,49 | $0,58 |
| Polarity | P-Channel | — |
| FET Type | MOSFET (Metal Oxide Semiconductor) | N-Channel |
| Technology | HEXFET (5th Generation) | — |
| VDS (Drain-Source Voltage) | -100 V | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| VGS(th) (Gate Threshold) | -2 V to -4 V | — |
| Continuous Drain Current (ID) at Tc=25C | -13 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at 100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 110 A |
| RDS(on) max at VGS=-10V | 205 mΩ | — |
| RDS(on) typical at VGS=-10V | 26 mΩ (per Mouser listing for IRFR5410TRPBF) | — |
| Total Gate Charge (Qg) | 70 nC | 16.7 nC |
| Power Dissipation (Pd) at Tc=25C | 66 W | — |
| Temperatura de unión de funcionamiento | -55C to +150C | — |
| Encapsulado | TO-252AA (DPAK) | D2PAK (TO-263), surface mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | — |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC | — | 30 A |
| RDS(on) at VGS=5V | — | 35 mOhm (typical) |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (5 V drive compatible) |
| Power Dissipation (Ta) | — | 3.8 W |
| Power Dissipation (Tc) | — | 68 W |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single with built-in diode |
| Switching Frequency Optimization | — | Below 100 kHz |
| Cell Structure | — | HEXFET planar (5th generation) |
| Qualification | — | JEDEC standard |
| Estado RoHS | — | Compliant (Pb-free) |