IRFR5410TRRPBF vs IRLZ34NSTRLPBF 对比
详细并排对比 IRFR5410TRRPBF 出自 Infineon 和 IRLZ34NSTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR5410TRRPBF | IRLZ34NSTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.49 | $0.58 |
| Polarity | P-Channel | — |
| FET Type | MOSFET (Metal Oxide Semiconductor) | N-Channel |
| Technology | HEXFET (5th Generation) | — |
| VDS (Drain-Source Voltage) | -100 V | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| VGS(th) (Gate Threshold) | -2 V to -4 V | — |
| Continuous Drain Current (ID) at Tc=25C | -13 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at 100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 110 A |
| RDS(on) max at VGS=-10V | 205 mΩ | — |
| RDS(on) typical at VGS=-10V | 26 mΩ (per Mouser listing for IRFR5410TRPBF) | — |
| Total Gate Charge (Qg) | 70 nC | 16.7 nC |
| Power Dissipation (Pd) at Tc=25C | 66 W | — |
| 工作结温 | -55C to +150C | — |
| 封装 | TO-252AA (DPAK) | D2PAK (TO-263), surface mount |
| 安装类型 | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | — |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC | — | 30 A |
| RDS(on) at VGS=5V | — | 35 mOhm (typical) |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (5 V drive compatible) |
| Power Dissipation (Ta) | — | 3.8 W |
| Power Dissipation (Tc) | — | 68 W |
| 工作温度范围 | — | [DATA_NEEDED: operating temperature range] |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single with built-in diode |
| Switching Frequency Optimization | — | Below 100 kHz |
| Cell Structure | — | HEXFET planar (5th generation) |
| Qualification | — | JEDEC standard |
| RoHS 状态 | — | Compliant (Pb-free) |