IRFS3006TRLPBF vs IRFB3207ZPBF Comparación
Comparación detallada lado a lado de IRFS3006TRLPBF por Infineon y IRFB3207ZPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFS3006TRLPBF | IRFB3207ZPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,40 | $1,62 |
| FET Type | N-Channel | — |
| Technology | IR HEXFET (Planar DMOS) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-Source Voltage (Vds) | 60 V | — |
| Continuous Drain Current (Id) at Tc=25C | 195 A | — |
| Pulsed Drain Current (Idm) | 270 A | — |
| On-Resistance Rds(on) max at Vgs=10V | 2.5 mOhm | — |
| Gate-Source Threshold Vgs(th) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 200 nC | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd value] | — |
| Power Dissipation (Pd) at Tc=25C | 375 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value] | — |
| Encapsulado | D2PAK (TO-263AB), surface mount | TO-220AB (3-lead through-hole) |
| Tipo de montaje | Surface Mount | Through Hole |
| RoHS Compliance | Lead-Free (Pb-Free), RoHS Compliant | — |
| Nivel MSL | 1 | N/A (through-hole) |
| Avalanche Energy Rating | Avalanche rated (per Infineon datasheet) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |