IRFS3006TRLPBF vs IRFB3207ZPBF Comparison
Detailed side-by-side comparison of IRFS3006TRLPBF by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFS3006TRLPBF | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.40 | $1.62 |
| FET Type | N-Channel | β |
| Technology | IR HEXFET (Planar DMOS) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-Source Voltage (Vds) | 60 V | β |
| Continuous Drain Current (Id) at Tc=25C | 195 A | β |
| Pulsed Drain Current (Idm) | 270 A | β |
| On-Resistance Rds(on) max at Vgs=10V | 2.5 mOhm | β |
| Gate-Source Threshold Vgs(th) | 2.0 V to 4.0 V | β |
| Total Gate Charge (Qg) | 200 nC | β |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd value] | β |
| Power Dissipation (Pd) at Tc=25C | 375 W | β |
| Operating Junction Temperature | -55 C to +175 C | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value] | β |
| Package | D2PAK (TO-263AB), surface mount | TO-220AB (3-lead through-hole) |
| Mounting Type | Surface Mount | Through Hole |
| RoHS Compliance | Lead-Free (Pb-Free), RoHS Compliant | β |
| MSL Level | 1 | N/A (through-hole) |
| Avalanche Energy Rating | Avalanche rated (per Infineon datasheet) | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRFB3207ZPBF |
| Series | β | HEXFET |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID) at TC=25C | β | 120 A |
| Silicon-Limited Drain Current | β | 170 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | β | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | β | 300 W |
| Lead-Free / RoHS | β | Yes (PBF suffix = lead-free) |
| Avalanche Rated | β | Yes (improved Z-variant ruggedness) |