IRLH5030TRPBF vs IRLR9343TRPBF Comparación
Comparación detallada lado a lado de IRLH5030TRPBF por Infineon y IRLR9343TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLH5030TRPBF | IRLR9343TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,15 | $0,47 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLH5030TRPBF | IRLR9343TRPBF |
| FET Type | N-Channel | P-Channel MOSFET |
| Technology | IR MOSFET (HEXFET) | IR HEXFET |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TA=25C | 13 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| On-Resistance RDS(on) max at VGS=10V | 9 mOhm | — |
| Total Gate Charge (Qg) | 44 nC | 31 nC (typical) |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | — |
| Power Dissipation at TA=25C | 3.6 W | — |
| Power Dissipation at TC=25C | 156 W | — |
| Thermal Resistance to PCB (RthJC) | 0.8 C/W | — |
| Encapsulado | PQFN-8 (SuperSO8 5x6 mm) | PG-TO252-3 (DPAK) Surface Mount |
| Profile Height | ≤ 0.9 mm | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Qualification | JEDEC standard | — |
| Rg Tested | 100% | — |
| RoHS Compliance | Compliant (Lead-free, Bromide-free, Halogen-free) | — |
| Industry-Standard Pinout | Yes | — |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at Tc=25C | — | -20 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current rating] |
| On-Resistance RDS(on) max at VGS=-10V | — | 105 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Power Dissipation (PD) at Tc=25C | — | 79 W |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: Tj min/max operating range] |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Nivel MSL | — | 1 |
| Optimized Application | — | Class-D audio amplifier output stages |
| Polarity | — | P-Channel |