IRLH5030TRPBF vs IRLR9343TRPBF 对比

详细并排对比 IRLH5030TRPBF 出自 Infineon 和 IRLR9343TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRLR9343TRPBF IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF ✓ 量产中

规格对比

参数 IRLH5030TRPBF IRLR9343TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.15 $0.47
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRLH5030TRPBF IRLR9343TRPBF
FET Type N-Channel P-Channel MOSFET
Technology IR MOSFET (HEXFET) IR HEXFET
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TA=25C 13 A —
Continuous Drain Current (ID) at TC=25C 100 A —
On-Resistance RDS(on) max at VGS=10V 9 mOhm —
Total Gate Charge (Qg) 44 nC 31 nC (typical)
Gate Drive Voltage (optimized) 10 V (capable of 4.5 V) —
Power Dissipation at TA=25C 3.6 W —
Power Dissipation at TC=25C 156 W —
Thermal Resistance to PCB (RthJC) 0.8 C/W —
封装 PQFN-8 (SuperSO8 5x6 mm) PG-TO252-3 (DPAK) Surface Mount
Profile Height ≤ 0.9 mm —
安装类型 Surface Mount Surface Mount
Qualification JEDEC standard —
Rg Tested 100% —
RoHS Compliance Compliant (Lead-free, Bromide-free, Halogen-free) —
Industry-Standard Pinout Yes —
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -20 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current rating]
On-Resistance RDS(on) max at VGS=-10V — 105 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: max VGS rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Power Dissipation (PD) at Tc=25C — 79 W
工作温度范围 — [DATA_NEEDED: Tj min/max operating range]
RoHS 状态 — Compliant
Lead-Free — Yes
MSL 等级 — 1
Optimized Application — Class-D audio amplifier output stages
Polarity — P-Channel

数据手册与资源

浏览全部产品 创建 BOM 获取报价