IRLL024ZTRPBF vs BSS214NWH6327XTSA1 Comparación
Comparación detallada lado a lado de IRLL024ZTRPBF por Infineon y BSS214NWH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLL024ZTRPBF | BSS214NWH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,46 | $0,15 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Technology | HEXFET Power MOSFET (trench-gate) | MOSFET (Metal Oxide) |
| FET Type | N-Channel enhancement-mode | N-Channel |
| Drain-Source Voltage (VDS) max | 55 V | — |
| Gate-Source Voltage (VGS) max | ±16 V | — |
| Continuous Drain Current (ID) at TC=25°C | 5 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 60 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) | — |
| Total Gate Charge (Qg) typical | 7 nC | — |
| Power Dissipation (PD) at TA=25°C | 1 W | — |
| Operating Junction Temperature (TJ) | -55 °C to +150 °C | — |
| Encapsulado | SOT-223 (TO-261-4) | PG-SOT323 (SOT-323-3) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (unlimited floor life) | — |
| Estado RoHS | Compliant | Compliant |
| Part Number | — | BSS214NWH6327XTSA1 |
| Series | — | OptiMOS |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) @ 25C | — | 1.5 A |
| Rds(on) Max @ Vgs=4.5V | — | 250 mOhm |
| Drive Voltage (Max Rds On, Min Rds On) | — | 2.5 V, 4.5 V |
| Power Dissipation (Pd) @ Ta=25C | — | 500 mW |
| Temperatura de funcionamiento | — | -55C to +150C (junction) |
| Qualification | — | AEC-Q101 (Automotive) |
| Lead-Free | — | Yes |