IRLL024ZTRPBF vs BSS214NWH6327XTSA1 Comparison

Detailed side-by-side comparison of IRLL024ZTRPBF by Infineon and BSS214NWH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 βœ“ Active

Specification Comparison

Parameter IRLL024ZTRPBF BSS214NWH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $0.15
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Technology HEXFET Power MOSFET (trench-gate) MOSFET (Metal Oxide)
FET Type N-Channel enhancement-mode N-Channel
Drain-Source Voltage (VDS) max 55 V β€”
Gate-Source Voltage (VGS) max Β±16 V β€”
Continuous Drain Current (ID) at TC=25Β°C 5 A β€”
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V 60 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) β€”
Total Gate Charge (Qg) typical 7 nC β€”
Power Dissipation (PD) at TA=25Β°C 1 W β€”
Operating Junction Temperature (TJ) -55 Β°C to +150 Β°C β€”
Package SOT-223 (TO-261-4) PG-SOT323 (SOT-323-3)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited floor life) β€”
RoHS Status Compliant Compliant
Part Number β€” BSS214NWH6327XTSA1
Series β€” OptiMOS
Drain-to-Source Voltage (Vdss) β€” 20 V
Continuous Drain Current (Id) @ 25C β€” 1.5 A
Rds(on) Max @ Vgs=4.5V β€” 250 mOhm
Drive Voltage (Max Rds On, Min Rds On) β€” 2.5 V, 4.5 V
Power Dissipation (Pd) @ Ta=25C β€” 500 mW
Operating Temperature β€” -55C to +150C (junction)
Qualification β€” AEC-Q101 (Automotive)
Lead-Free β€” Yes

Datasheets & Resources

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