IRLML6346TRPBF vs IRLML6246TRPBF Comparación
Comparación detallada lado a lado de IRLML6346TRPBF por Infineon y IRLML6246TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLML6346TRPBF | IRLML6246TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,18 | $0,11 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) | 3.4 A (TA=25C) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM pulsed value] |
| RDS(on) max @ VGS=2.5V | 63 mOhm | — |
| RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Drive Capability | 2.5V logic-level | — |
| Maximum Power Dissipation (PD) | 1.3 W (TA=25C, 1in2 FR4) | — |
| Temperatura de unión de funcionamiento | -55C to +150C | — |
| Encapsulado | Micro3 / SOT-23 | SOT-23 (Micro3) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | IR MOSFET (HEXFET Power MOSFET) |
| Nivel MSL | 1 | MSL1 (per JEDEC J-STD-020) |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Estado RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLML6246TRPBF |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 20 V |
| Continuous Drain Current (ID) at Ta=25C | — | 4.1 A |
| On-Resistance RDS(on) max @ VGS=4.5V | — | 46 mOhm |
| On-Resistance RDS(on) max @ VGS=2.5V | — | [DATA_NEEDED: RDS(on) at 2.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.1 V (logic-level) |
| Gate Charge Qg typ | — | [DATA_NEEDED: Qg total gate charge] |
| Power Dissipation (Ta=25C) | — | 1.3 W |
| Rango de temperatura de funcionamiento | — | -55C to +150C (junction) |
| RoHS Compliance | — | Yes (Pb-free) |
| Sin halógenos | — | Yes |