IRLR3410TRRPBF vs IRLR3410TRPBF Comparación
Comparación detallada lado a lado de IRLR3410TRRPBF por Infineon y IRLR3410TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLR3410TRRPBF | IRLR3410TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,58 | $0,81 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc=25C) | 17 A | — |
| Power Dissipation (PD, Tc=25C) | 79 W | — |
| On-Resistance (RDS(on) max at VGS=10V) | 105 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1 V (at 250 uA) | — |
| Total Gate Charge (Qg) | 22.7 nC | 22.7 nC |
| Technology | IR HEXFET (IR MOSFET process) | HEXFET (IR MOSFET, 5th generation) |
| Encapsulado | TO-252AA (DPAK), surface mount | TO-252AA (DPAK), surface mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Packaging Style | Tape & Reel Right (TRR) | — |
| Avalanche Rated | Yes | — |
| Rango de temperatura de funcionamiento | -55C to +175C (junction) | -55C to +175C (junction) |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 (unlimited floor life at <30C/85% RH) |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 17 A |
| Power Dissipation (Pd) at Tc=25C | — | 79 W |
| On-Resistance RDS(on) max | — | 105 mOhm |
| Gate Threshold Voltage Vgs(th) | — | Logic-level (drive ~4.5V) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Drain Tab Connection | — | Tab electrically tied to Drain |
| Polarity | — | N-Channel enhancement mode |