IRLR3410TRRPBF vs IRLR3410TRPBF Comparison
Detailed side-by-side comparison of IRLR3410TRRPBF by Infineon and IRLR3410TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR3410TRRPBF | IRLR3410TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.81 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tc=25C) | 17 A | β |
| Power Dissipation (PD, Tc=25C) | 79 W | β |
| On-Resistance (RDS(on) max at VGS=10V) | 105 mOhm | β |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1 V (at 250 uA) | β |
| Total Gate Charge (Qg) | 22.7 nC | 22.7 nC |
| Technology | IR HEXFET (IR MOSFET process) | HEXFET (IR MOSFET, 5th generation) |
| Package | TO-252AA (DPAK), surface mount | TO-252AA (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging Style | Tape & Reel Right (TRR) | β |
| Avalanche Rated | Yes | β |
| Operating Temperature Range | -55C to +175C (junction) | -55C to +175C (junction) |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (unlimited floor life at <30C/85% RH) |
| Drain-Source Voltage (Vdss) | β | 100 V |
| Continuous Drain Current (Id) at Tc=25C | β | 17 A |
| Power Dissipation (Pd) at Tc=25C | β | 79 W |
| On-Resistance RDS(on) max | β | 105 mOhm |
| Gate Threshold Voltage Vgs(th) | β | Logic-level (drive ~4.5V) |
| Lead-Free / RoHS | β | Yes (PBF suffix) |
| Drain Tab Connection | β | Tab electrically tied to Drain |
| Polarity | β | N-Channel enhancement mode |