IRLR8726TRLPBF vs IPD031N06L3GATMA1 Comparación
Comparación detallada lado a lado de IRLR8726TRLPBF por Infineon y IPD031N06L3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΩ N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IRLR8726TRLPBF | IPD031N06L3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,36 | $0,48 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TC=25C | 86 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 400 A |
| On-Resistance RDS(on) Max at VGS=10V | 5.8 mOhm | — |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | 15 nC | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Maximum Power Dissipation (PD) at TC=25C | 75 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Encapsulado | TO-252AA (DPAK) | PG-TO252-3 (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology Family | StrongIRFET | — |
| RoHS Compliance | ROHS3 Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Nivel MSL | 1 (per JEDEC J-STD-020, inferred from PBF suffix and DPAK packaging) | 1 (Unlimited) |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 100 A |
| Maximum Power Dissipation (PD) at TC=25°C | — | 167 W |
| RDS(on) Max at VGS=10V | — | 3.1 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.2 V |
| Gate Drive Voltage (Max RDS(on)) | — | 4.5 V, 10 V |
| Total Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typical value] |
| Rango de temperatura de funcionamiento | — | -55°C to +175°C |
| Series | — | OptiMOS 3 |
| Estado RoHS | — | Compliant |