IRLR8726TRLPBF vs IPD031N06L3GATMA1 비교

다음의 상세 나란히 비교: IRLR8726TRLPBF 제조: Infineon 및 IPD031N06L3GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRLR8726TRLPBF IPD031N06L3GATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.36 $0.48
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TC=25C 86 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 400 A
On-Resistance RDS(on) Max at VGS=10V 5.8 mOhm —
On-Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) 15 nC —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Maximum Power Dissipation (PD) at TC=25C 75 W —
동작 접합 온도 -55C to +175C —
패키지 TO-252AA (DPAK) PG-TO252-3 (DPAK)
실장 유형 Surface Mount Surface Mount
Technology Family StrongIRFET —
RoHS Compliance ROHS3 Compliant —
Lead-Free Yes (PBF suffix) —
MSL 레벨 1 (per JEDEC J-STD-020, inferred from PBF suffix and DPAK packaging) 1 (Unlimited)
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25°C — 100 A
Maximum Power Dissipation (PD) at TC=25°C — 167 W
RDS(on) Max at VGS=10V — 3.1 mΩ
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.2 V
Gate Drive Voltage (Max RDS(on)) — 4.5 V, 10 V
Total Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typical value]
동작 온도 범위 — -55°C to +175°C
Series — OptiMOS 3
RoHS 상태 — Compliant

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