IRLS3036TRLPBF vs IRF1310NSTRLPBF Comparación
Comparación detallada lado a lado de IRLS3036TRLPBF por Infineon y IRF1310NSTRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLS3036TRLPBF | IRF1310NSTRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,39 | $0,84 |
| Polarity | N-Channel | — |
| Technology | IR HEXFET (planar DMOS) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) at Tc=25C | 270 A | — |
| Continuous Drain Current (Id) at Tc=100C | 195 A | — |
| Pulsed Drain Current (Idm) | 1100 A | — |
| Rds(on) max @ Vgs=10V | 1.9 mOhm | — |
| Gate-Source Threshold Voltage (Vgs(th)) | Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max] | — |
| Total Gate Charge (Qg) typ | 91 nC | — |
| Gate-Source Voltage (Vgs) max | [DATA_NEEDED: Vgs max +/- V] | — |
| Power Dissipation (Pd) at Tc=25C | 380 W | — |
| Rango de temperatura de funcionamiento | -55C to +175C | -55C to +175C |
| Encapsulado | D2PAK (TO-263), surface mount | D2PAK (TO-263AB) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 | — |
| Estado RoHS | Compliant (PBF suffix) | — |
| Lead-Free | Yes (PBF suffix) | — |
| Integrated Body Diode | Yes (avalanche rated) | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 36 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | 73.3 nC |
| Power Dissipation (PD) at TC=25C | — | 160 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Built-in Diode | — | Yes (intrinsic body diode) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Configuration | — | Single with built-in diode |