IRLS3036TRLPBF vs IRF1310NSTRLPBF Comparison

Detailed side-by-side comparison of IRLS3036TRLPBF by Infineon and IRF1310NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLS3036TRLPBF IRLS3036TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRLS3036TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRLS3036TRLPBF βœ“ Active
Infineon
IRF1310NSTRLPBF IRF1310NSTRLPBF - 100V 42A N-Channel MOSFET | Infineon D2PAK

IRF1310NSTRLPBF - 100V 42A N-Channel MOSFET | Infineon D2PAK

IRF1310NSTRLPBF βœ“ Active

Specification Comparison

Parameter IRLS3036TRLPBF IRF1310NSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.39 $0.84
Polarity N-Channel β€”
Technology IR HEXFET (planar DMOS) IR MOSFET (HEXFET)
Drain-Source Voltage (Vdss) 60 V β€”
Continuous Drain Current (Id) at Tc=25C 270 A β€”
Continuous Drain Current (Id) at Tc=100C 195 A β€”
Pulsed Drain Current (Idm) 1100 A β€”
Rds(on) max @ Vgs=10V 1.9 mOhm β€”
Gate-Source Threshold Voltage (Vgs(th)) Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max] β€”
Total Gate Charge (Qg) typ 91 nC β€”
Gate-Source Voltage (Vgs) max [DATA_NEEDED: Vgs max +/- V] β€”
Power Dissipation (Pd) at Tc=25C 380 W β€”
Operating Temperature Range -55C to +175C -55C to +175C
Package D2PAK (TO-263), surface mount D2PAK (TO-263AB)
Mounting Type Surface Mount Surface Mount
MSL Level 1 β€”
RoHS Status Compliant (PBF suffix) β€”
Lead-Free Yes (PBF suffix) β€”
Integrated Body Diode Yes (avalanche rated) β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at TC=25C β€” 42 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V β€” 36 mOhm
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” 73.3 nC
Power Dissipation (PD) at TC=25C β€” 160 W
Power Dissipation (PD) at TA=25C β€” 3.8 W
Built-in Diode β€” Yes (intrinsic body diode)
Lead-Free / RoHS β€” Yes (PBF suffix)
Configuration β€” Single with built-in diode

Datasheets & Resources

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