IRLZ34NPBF vs IRF520NPBF Comparación
Comparación detallada lado a lado de IRLZ34NPBF por Infineon y IRF520NPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLZ34NPBF | IRF520NPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,65 | $0,66 |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies |
| Part Number Suffix | PBF = Lead-free (Pb-free), Tube packaging | — |
| Tipo de transistor | N-Channel HEXFET Power MOSFET | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25 C | 30 A | — |
| Continuous Drain Current (ID) at Tc=100 C | [DATA_NEEDED: ID at Tc=100 C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance Rds(on) max @ VGS=10 V | 35 mOhm | — |
| On-Resistance Rds(on) max @ VGS=5 V | [DATA_NEEDED: Rds(on) at VGS=5 V] | — |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (logic-level) | — |
| Total Gate Charge (Qg) | 16.7 nC (typical) | — |
| Power Dissipation (PD) at Tc=25 C | 68 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Encapsulado | TO-220AB (through-hole, 3 leads + tab) | TO-220AB (through-hole) |
| Tipo de montaje | Through Hole | Through Hole |
| Estado RoHS | Compliant (Pb-free PBF suffix) | Compliant (Pb-free) |
| Nivel MSL | Not applicable (through-hole) | 1 (unlimited) |
| Series | — | HEXFET |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 100 V |
| Continuous Drain Current (I_D) at Tc | — | 9.7 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (V_GS) max | — | ±20 V |
| R_DS(on) max at V_GS=10V | — | 200 mOhm |
| Total Gate Charge (Q_g) | — | 16.7 nC |
| Power Dissipation (P_D) at Tc | — | 48 W |
| Rango de temperatura de funcionamiento | — | -55C to +175C |
| Lead-Free Finish | — | Yes (PBF suffix) |
| Technology | — | HEXFET (vertical DMOS) |