IRLZ34NPBF vs IRF520NPBF Comparison
Detailed side-by-side comparison of IRLZ34NPBF by Infineon and IRF520NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLZ34NPBF | IRF520NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.66 |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies |
| Part Number Suffix | PBF = Lead-free (Pb-free), Tube packaging | β |
| Transistor Type | N-Channel HEXFET Power MOSFET | β |
| Drain-to-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at Tc=25 C | 30 A | β |
| Continuous Drain Current (ID) at Tc=100 C | [DATA_NEEDED: ID at Tc=100 C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance Rds(on) max @ VGS=10 V | 35 mOhm | β |
| On-Resistance Rds(on) max @ VGS=5 V | [DATA_NEEDED: Rds(on) at VGS=5 V] | β |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (logic-level) | β |
| Total Gate Charge (Qg) | 16.7 nC (typical) | β |
| Power Dissipation (PD) at Tc=25 C | 68 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | TO-220AB (through-hole, 3 leads + tab) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| RoHS Status | Compliant (Pb-free PBF suffix) | Compliant (Pb-free) |
| MSL Level | Not applicable (through-hole) | 1 (unlimited) |
| Series | β | HEXFET |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (V_DSS) | β | 100 V |
| Continuous Drain Current (I_D) at Tc | β | 9.7 A |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (V_GS) max | β | Β±20 V |
| R_DS(on) max at V_GS=10V | β | 200 mOhm |
| Total Gate Charge (Q_g) | β | 16.7 nC |
| Power Dissipation (P_D) at Tc | β | 48 W |
| Operating Temperature Range | β | -55C to +175C |
| Lead-Free Finish | β | Yes (PBF suffix) |
| Technology | β | HEXFET (vertical DMOS) |