IRLZ34NSTRLPBF vs IRF5305STRLPBF Comparación
Comparación detallada lado a lado de IRLZ34NSTRLPBF por Infineon y IRF5305STRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLZ34NSTRLPBF | IRF5305STRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,58 | $0,92 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 30 A | — |
| Pulsed Drain Current (IDM) | 110 A | — |
| RDS(on) at VGS=5V | 35 mOhm (typical) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (5 V drive compatible) | — |
| Total Gate Charge (Qg) | 16.7 nC | 42 nC (Mouser listing) / 63 nC (Future Electronics listing) |
| Power Dissipation (Ta) | 3.8 W | — |
| Power Dissipation (Tc) | 68 W | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Tj max / operating range] |
| Encapsulado | D2PAK (TO-263), surface mount | TO-263 / D2PAK (surface mount) |
| Built-in Body Diode | Yes | — |
| Configuration | Single with built-in diode | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Switching Frequency Optimization | Below 100 kHz | — |
| Cell Structure | HEXFET planar (5th generation) | — |
| Qualification | JEDEC standard | — |
| Estado RoHS | Compliant (Pb-free) | — |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | -31 A |
| Continuous Drain Current (ID) at TA=25C | — | [DATA_NEEDED: ID at TA=25C] |
| RDS(on) max at VGS=-10V | — | 60 mOhm |
| RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Maximum Power Dissition at Tc | — | 110 W |
| Maximum Power Dissipation at TA | — | 3.8 W |
| Technology | — | HEXFET (fifth generation), IR MOSFET |
| Packaging | — | Tape & Reel (TR), 800 pcs per reel |
| Lead-Free / RoHS | — | Yes (Pb-free suffix PBF) |