IRLZ44NPBF vs IRL540NPBF Comparación
Comparación detallada lado a lado de IRLZ44NPBF por Infineon y IRL540NPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLZ44NPBF | IRL540NPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,68 | $0,86 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 47 A | — |
| Pulsed Drain Current (IDM) | 160 A | 130 A (pulsed) |
| Gate-to-Source Voltage (VGS) Max | ±16 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (typ 1.5 V) | 1 V to 2 V (logic level) |
| Static Drain-to-Source On-Resistance (RDS(on)) | 22 mΩ max at VGS=5V, ID=25A | — |
| Total Gate Charge (Qg) | 32 nC | 49.3 nC |
| Power Dissipation (PD) at TC=25°C | 110 W | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RθJC) | 1.4 °C/W | — |
| Encapsulado | TO-220AB (through-hole, 3 leads) | TO-220AB (through-hole) |
| Tipo de montaje | Through Hole | Through Hole |
| Technology | HEXFET (advanced process) | HEXFET (Planar DMOS) |
| Logic-Level Gate Drive | Yes (fully enhanced at VGS=5V) | — |
| Estado RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Part Number | — | IRL540NPBF |
| Tipo de transistor | — | N-Channel MOSFET |
| Gate-to-Source Voltage (VGS) max | — | +/-16 V |
| Continuous Drain Current (ID) at Tc=25C | — | 36 A |
| On-Resistance RDS(on) max | — | 44 mOhm at VGS=5V |
| Power Dissipation (PD) at Tc=25C | — | 140 W |
| Lead-Free | — | Yes (PBF suffix) |