IRL540NPBF - 100V 36A N-Channel HEXFET MOSFET TO-220
N.º de pieza: IRL540NPBF ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.56 | $1,56 |
| 10 | $1.42 | $14,20 |
| 100 | $1.18 | $118,00 |
| 500 | $0.99 | $495,00 |
| 1.000 | $0.86 | $860,00 |
IRL540NPBF Descripción general
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to commutate current between the drain and source terminals. Power MOSFETs belong to the discrete semiconductor family, sitting between signal-level transistors and high-power IGBTs. They dominate applications below 600 V thanks to their fast switching, easy gate drive, and high input impedance. The IRL540NPBF specifically is a logic-level device: its gate can be driven from 4 V Vgs onward, allowing direct control from microcontrollers, gate drivers, or 5 V logic rails without a charge pump.
Key differentiating features include a 100 V VDS rating that provides ample headroom for 48 V telecom, automotive 12 V/24 V, and battery-powered systems, and a 49.3 nC Qg that enables switching frequencies from 100 kHz to 1 MHz in DC-DC and motor drive circuits. The TO-220AB package allows hand-solderable through-hole mounting and provides a thermal resistance around 62 C/W junction-to-case, with a typical maximum power dissipation of 140 W at 25 C case temperature.
The device is built on Infineon's HEXFET planar process technology, which combines a vertical DMOS structure with a polysilicon gate for low on-resistance per unit area. Its avalanche-rated design withstands unclamped inductive switching transients, important for motor and solenoid loads where back-EMF pulses occur at turn-off. The logic-level gate threshold (typically 1 V to 2 V, max 2 V to 2.5 V specified in datasheet) lets designers omit level-shift circuitry.
Typical applications include low-voltage DC motor drives, PWM speed controllers, solenoid and relay drivers, synchronous-rectifier stages in low-side switch positions, LED drivers, and high-side switches in 24 V industrial systems. It is also widely used in e-bike and scooter controllers, audio amplifier output stages, and battery protection circuits.
When designing with the IRL540NPBF, observe the SOA curve carefully: at high VDS combined with high ID, the device can only handle pulsed operation. A gate-source Zener clamp of 16 V is recommended for protection against Vgs overstress. Layout should keep the gate loop short to minimize ringing during switching.
This page synthesizes distributor pricing, parametric alternatives, and practical design notes not found in the manufacturer datasheet alone.
Alternativas directas para IRL540NPBF — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IRL540NPBF (mismo factor de forma y huella) — difiere en Package, Mounting Type, Drain-to-Source Voltage (VDS), Gate Threshold Voltage (VGS(th)), Operating Junction Temperature.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IRF540NPBF
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRLZ44NPBF
✅ Sustitución directa✓ En stock
$0.6779 / unidad
Ver hoja de datos →STP55NF06L
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
FQP47P06
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
RFP30N06LE
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRL540NPBF Valores máximos y características eléctricas
| Manufacturer | Infineon (formerly International Rectifier) |
| Part Number | IRL540NPBF |
| Tipo de transistor | N-Channel MOSFET |
| Technology | HEXFET (Planar DMOS) |
| Drain-to-Source Voltage (VDS) | 100 V |
| Gate-to-Source Voltage (VGS) max | +/-16 V |
| Continuous Drain Current (ID) at Tc=25C | 36 A |
| Pulsed Drain Current (IDM) | 130 A (pulsed) |
| On-Resistance RDS(on) max | 44 mOhm at VGS=5V |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2 V (logic level) |
| Total Gate Charge (Qg) | 49.3 nC |
| Power Dissipation (PD) at Tc=25C | 140 W |
| Temperatura de unión de funcionamiento | -55 C to +175 C |
| Encapsulado | TO-220AB (through-hole) |
| Tipo de montaje | Through Hole |
| Estado RoHS | Compliant |
| Lead-Free | Yes (PBF suffix) |
Configuración de pines de IRL540NPBF
| Pin 1 | Gate — Gate control input; logic-level drive (4V-5V fully on) |
| Pin 2 | Drain — Drain terminal; electrically connected to the tab |
| Pin 3 | Source — Source terminal; reference ground for gate drive |
Área de funcionamiento seguro
Aplicaciones típicas
IRL540NPBF es adecuado para 6 aplicacións: DC Motor Speed Control (PWM), Solenoid and Relay Driver, Battery Protection and Load Switching, LED Driver and Dimming, Synchronous Rectifier (Low-Side), Audio Amplifier Output Stage.
DC Motor Speed Control (PWM)
The IRL540NPBF's 100 V VDS rating, 36 A continuous drain current, and 49.3 nC total gate charge make it well suited for low-voltage brushed DC motor PWM speed control. Its logic-level gate threshold (VGS(th) 1 V to 2 V) allows direct drive from a 5 V microcontroller PWM output without a gate driver IC, simplifying the BOM. At 25 kHz PWM with a 24 V supply and a 5 A motor, switching losses are minimal thanks to the low Qg. Use it in low-side switch configuration with a flyback diode across the motor to handle inductive kick-back. Mount the TO-220AB tab to a small heatsink for continuous operation above 5 A.
Recomendado
Solenoid and Relay Driver
Driving inductive loads such as 24 V solenoids, valves, and relays benefits from the IRL540NPBF's 130 A pulsed drain current rating and avalanche energy capability. Place the MOSFET in low-side configuration with a flyback diode (e.g. 1N4007) across the coil to clamp back-EMF at turn-off. The logic-level gate allows direct NPN-transistor or microcontroller interfacing, eliminating driver stages. The 100 V rating provides ample headroom for the inductive kick of 24 V coils (which can spike above 80 V). Add a 10 kohm gate-source pull-down resistor to keep the MOSFET off during MCU reset.
Recomendado
Battery Protection and Load Switching
The IRL540NPBF is widely used as a high-side or low-side load switch in 12 V/24 V lithium-ion and lead-acid battery packs. Its 44 milliohm RDS(on) at 5 V gate drive keeps conduction losses low - approximately 1.6 W at 6 A continuous load, which is manageable on the TO-220AB tab. For 4S Li-ion (16.8 V max) or 24 V lead-acid packs, the 100 V VDS rating provides at least 5x safety margin. The logic-level gate allows direct N-channel MOSFET control without a charge pump, reducing the BMS cost. Add a TVS diode (e.g. SMBJ33A) at the drain for transient suppression.
Recomendado
LED Driver and Dimming
High-brightness LED arrays in architectural, automotive, and stage-lighting systems use the IRL540NPBF for PWM dimming thanks to its 100 V rating and fast switching. At 1 kHz to 10 kHz PWM frequencies, the 49.3 nC gate charge produces negligible switching losses. Drive the gate directly from a logic-level PWM source or an LED driver IC for precise 0-100 % dimming. The 36 A continuous rating supports LED strings totaling several hundred watts when used with proper thermal management. Add a series gate resistor (10-100 ohm) to slow the switching edge and reduce EMI.
Recomendado
Synchronous Rectifier (Low-Side)
In low-side synchronous rectification positions of buck converters operating below 100 V, the IRL540NPBF provides lower conduction loss than a Schottky diode at high currents. Its 44 milliohm RDS(on) at 5 V gate means a 10 A rectifier sees only 0.44 V drop versus 0.6 V typical for a Schottky. Drive the gate from a synchronous-rectifier controller IC that complements the high-side switch timing. The TO-220AB package allows top-side cooling with airflow or a small clip-on heatsink. Note: for >50 kHz operation, verify gate-charge driven switching losses are acceptable for your efficiency budget.
Recomendado
Audio Amplifier Output Stage
Class-D and switching audio amplifiers below 100 V use the IRL540NPBF in the output half-bridge or full-bridge positions. Its low on-resistance of 44 milliohm keeps conduction losses below 1 % at typical audio current levels, and its 49.3 nC gate charge supports 250 kHz to 500 kHz switching frequencies common in audio amplifiers. The logic-level gate permits direct gate drive from Class-D controller ICs, simplifying the gate-drive path. Mount the TO-220AB tab on a substantial heatsink, as audio amplifiers can deliver continuous RMS current that drives high thermal dissipation.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IRL540NPBF — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IRF540NPBF | IRLZ44NPBF | STP55NF06L | FQP47P06 | RFP30N06LE |
|---|---|---|---|---|---|---|
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Brand | Infineon | Infineon | Infineon | STMicroelectronics | onsemi | onsemi |
| Drain-to-Source Voltage (VDS) | 100 V | 100 V | 55 V | 60 V | 60 V | 60 V |
| Continuous Drain Current (ID) | 36 A | 33 A | 47 A | 55 A | 47 A | 30 A |
| RDS(on) max at 5V/10V | 44 mOhm at VGS=5V | 44 mOhm at VGS=10V | 14 mOhm at VGS=5V | 18 mOhm at VGS=5V | 26 mOhm at VGS=10V | 35 mOhm at VGS=5V |
| Gate Threshold Voltage | 1 V to 2 V (logic level) | 2 V to 4 V (standard level) | 1 V to 2 V (logic level) | 1 V to 2.5 V (logic level) | 2 V to 4 V (standard level) | 1 V to 2.5 V (logic level) |
| Total Gate Charge (Qg) | 49.3 nC | 71 nC | 48 nC | 80 nC | 110 nC | 60 nC |
| Power Dissipation (PD) | 140 W | 130 W | 94 W | 110 W | 120 W | 90 W |
Diferenciadores clave
- Logic-level gate drive at 5V (frente a IRF540NPBF)
- Higher VDS rating than most logic-level TO-220 alternatives (frente a IRLZ44NPBF)
- Lower gate charge than most 100V TO-220 alternatives (frente a IRF540NPBF)
Notas de diseño
Estimated: At ID=10A, VGS=5V, RDS(on)=44 milliohm, conduction loss is P=I^2*R=10^2*0.044=4.4W. With TO-220AB junction-to-ambient thermal resistance of 62 C/W and no heatsink, junction temperature rise is 273C - well above the 175C maximum. A small clip-on heatsink (theta-SA=20 C/W) limits the rise to about 88C above 25C ambient, staying within the safe operating area. Always derate the MOSFET so PD stays below 50W continuous when properly heatsunk.
Keep the gate-drive loop physically small to minimize parasitic inductance that causes ringing during switching transitions. Place the gate resistor (typically 10-100 ohm) close to the gate pin and use a wide, short trace to the source return. A 10 kohm gate-source pull-down resistor keeps the MOSFET in the off state during MCU reset and provides a discharge path for the gate-source capacitance when the driver is high-impedance.
Do not exceed VGS of +/-16V even transiently; add a 16V Zener clamp (e.g. 1N4745A) gate-to-source for protection against Vgs overstress from inductive kick or ESD. Also verify the SOA curve carefully: at high VDS (>50V) combined with high ID (>5A), the IRL540NPBF can only handle pulsed operation, not DC. Crossing this boundary without a heatsink or for extended duration causes thermal failure.
Fast switching of the IRL540NPBF produces EMI that can disturb nearby analog or RF circuits. Add an RC snubber (100 ohm + 1 nF) across drain-source to slow the voltage rise, and use a small ferrite bead on the gate to dampen ringing. For particularly noisy environments, place a small RC (10 ohm + 100 nF) between drain and source right at the package leads to reduce dV/dt.
Información de cumplimiento
PBF suffix denotes lead-free (Pb-free) plating per Infineon/International Rectifier conventions. RoHS and REACH compliance per manufacturer product page. Not AEC-Q100 qualified - this part is intended for industrial and consumer use, not automotive.
