IRS2110SPBF vs 2ED2738S01GXTMA1 Comparación
Comparación detallada lado a lado de IRS2110SPBF por Infineon y 2ED2738S01GXTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRS2110SPBF | 2ED2738S01GXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,72 | $0,95 |
| Driver Type | High and Low Side, Half-Bridge | — |
| Number of Drivers | 2 | — |
| Configuración de salida | Non-Inverting | — |
| Peak Source/Sink Current | 2.5 A / 2.5 A | — |
| Offset Voltage (High-Side) | Up to 500 V | — |
| Logic Supply Voltage (VCC) | 10 V to 20 V | — |
| Floating Supply Voltage (VBS) | 10 V to 20 V (25 V abs max) | — |
| Propagation Delay (typ.) | 120 ns | — |
| Rise Time (typ.) | 25 ns | — |
| Fall Time (typ.) | 17 ns | — |
| Undervoltage Lockout | Yes (VCC and VBS) | — |
| Input Logic Compatibility | TTL / CMOS with hysteresis | TTL |
| Rango de temperatura de funcionamiento | -40 C to +125 C | — |
| Encapsulado | 16-SOIC (SOIC-16 W) | PG-VSON-10-5 (3x3 mm) with EP |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant (Pb-free) | Compliant |
| Nivel MSL | 3 | 2 (1 year) |
| Driver Configuration | — | Half-Bridge (High-Side + Low-Side) |
| Output Current (Source, peak) | — | 4.0 A |
| Output Current (Sink, peak) | — | 8.0 A |
| Output Current (Source, typ) | — | 1.0 A |
| Output Current (Sink, typ) | — | 2.0 A |
| Número de salidas | — | 1 |
| Input Type | — | Non-Inverting |
| Supply Voltage (VDD/VCC) | — | 6 V to 20 V |
| Bootstrap Supply Voltage | — | Up to 600 V (HS pin rating) |
| Propagation Delay (typ) | — | 120 ns |
| Channel-to-Channel Match | — | 40 ns |
| Rise/Fall Time (1 nF load) | — | 1.5 ns / 1.5 ns |
| Negative Transient Immunity (HS) | — | -10 V to +20 V transient |
| Under-Voltage Lockout | — | VCC and Bootstrap |
| Bootstrap Diode | — | Integrated |
| Temperatura de funcionamiento | — | -40C to +125C |