ISC011N04NM7VATMA1 vs BSC011N03LSTATMA1 Comparación
Comparación detallada lado a lado de ISC011N04NM7VATMA1 por Infineon y BSC011N03LSTATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | ISC011N04NM7VATMA1 | BSC011N03LSTATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,41 | $1,55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | — |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | Trench MOSFET |
| Encapsulado | PG-TDSON-8 (source-down) | PG-TDSON-8 FL (8-pin, exposed drain pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (TJ) | — |
| RoHS Compliance | Compliant (per Infineon product page) | — |
| Nivel MSL | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Series | — | OptiMOS |
| Continuous Drain Current (ID) at TA=25C | — | 39 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | — | 1.1 mOhm (typical 0.9 mOhm) |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) typ | — | 72 nC |
| Power Dissipation at TA=25C | — | 3 W |
| Power Dissipation at TC=25C | — | 115 W |
| Temperatura de unión de funcionamiento | — | -55C to +150C |
| Configuration | — | Single with built-in diode |
| Estado RoHS | — | Compliant |