ISC011N04NM7VATMA1 vs BSC011N03LSTATMA1 比較
詳細な並列比較: ISC011N04NM7VATMA1 メーカー: Infineon および BSC011N03LSTATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | ISC011N04NM7VATMA1 | BSC011N03LSTATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | NRND |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.41 | $1.55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | — |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | Trench MOSFET |
| パッケージ | PG-TDSON-8 (source-down) | PG-TDSON-8 FL (8-pin, exposed drain pad) |
| 実装タイプ | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | — |
| 動作温度範囲 | -55 °C to +175 °C (TJ) | — |
| RoHS Compliance | Compliant (per Infineon product page) | — |
| MSLレベル | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Series | — | OptiMOS |
| Continuous Drain Current (ID) at TA=25C | — | 39 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | — | 1.1 mOhm (typical 0.9 mOhm) |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) typ | — | 72 nC |
| Power Dissipation at TA=25C | — | 3 W |
| Power Dissipation at TC=25C | — | 115 W |
| 動作接合温度 | — | -55C to +150C |
| Configuration | — | Single with built-in diode |
| RoHS ステータス | — | Compliant |