ISC011N04NM7VATMA1 vs BSC018NE2LSATMA1 Comparación
Comparación detallada lado a lado de ISC011N04NM7VATMA1 por Infineon y BSC018NE2LSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | ISC011N04NM7VATMA1 | BSC018NE2LSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,41 | $0,78 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 Power-Transistor | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 25 V |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | — |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | OptiMOS 25V (Trench) |
| Encapsulado | PG-TDSON-8 (source-down) | PG-TDSON-8-1 (8-PowerTDFN) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (TJ) | -55°C to +150°C (TJ) |
| RoHS Compliance | Compliant (per Infineon product page) | — |
| Nivel MSL | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, Ta) | — | 29 A |
| On-Resistance RDS(on) @ VGS=10V | — | 1.8 mΩ (typical) |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Charge (Qg) | — | 39 nC @ VGS=10V |
| Output Capacitance (Coss) | — | 2800 pF @ VDS=12V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 69 W |
| Estado RoHS | — | Compliant |