ISC015N06NM5LF2ATMA1 vs IAUC120N04S6N009ATMA1 Comparación
Comparación detallada lado a lado de ISC015N06NM5LF2ATMA1 por Infineon y IAUC120N04S6N009ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 ✓ ActivoInfineon
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISC015N06NM5LF2ATMA1 | IAUC120N04S6N009ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,21 | $1,60 |
| Technology | OptiMOS 5 Linear FET 2 (N-Channel) | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Pulsed Drain Current (IDM) at Tc | 275 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 217 W | — |
| On-Resistance RDS(on) max at VGS=10V | 1.55 mΩ | — |
| On-Resistance RDS(on) at VGS=10V (typ) | 1.3 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3 V | — |
| Gate-Source Voltage Rating | ±20 V | — |
| Reverse Recovery Charge (Qrr) | 1.3 nC | — |
| Input Capacitance (Ciss) | 6.9 nF | — |
| Output Capacitance (Coss) | 1.3 nF | — |
| Reverse Transfer Capacitance (Crss) | 55 pF | — |
| Total Gate Charge (Qg) | 90 nC | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | -55 °C to +175 °C |
| Encapsulado | PG-TDSON-8 FL (5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 6 40V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 120 A |
| Corriente de drenador pulsada | — | [DATA_NEEDED: pulsed I_D value] |
| R_DS(on) max @ V_GS=10V | — | 0.9 mΩ |
| Gate Threshold Voltage V_GS(th) typ | — | [DATA_NEEDED: V_GS(th) typical value] |
| Total Gate Charge Q_g typ | — | [DATA_NEEDED: Q_g typical] |
| Power Dissipation (Tc) | — | 150 W |
| Thermal Resistance R_thJC max | — | 1.0 K/W |
| Automotive Qualification | — | AEC-Q101 |
| Nivel MSL | — | 1 |
| Lead-Free / Halogen-Free | — | Yes (per Infineon product page) |