ISC015N06NM5LF2ATMA1 vs IAUC120N04S6N009ATMA1 对比

详细并排对比 ISC015N06NM5LF2ATMA1 出自 Infineon 和 IAUC120N04S6N009ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ISC015N06NM5LF2ATMA1 ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon

ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon

ISC015N06NM5LF2ATMA1 ✓ 量产中
Infineon
IAUC120N04S6N009ATMA1 IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 ✓ 量产中

规格对比

参数 ISC015N06NM5LF2ATMA1 IAUC120N04S6N009ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.21 $1.60
Technology OptiMOS 5 Linear FET 2 (N-Channel) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 32 A —
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 217 W —
On-Resistance RDS(on) max at VGS=10V 1.55 mΩ —
On-Resistance RDS(on) at VGS=10V (typ) 1.3 mΩ —
Gate Threshold Voltage (VGS(th)) 3 V —
Gate-Source Voltage Rating ±20 V —
Reverse Recovery Charge (Qrr) 1.3 nC —
Input Capacitance (Ciss) 6.9 nF —
Output Capacitance (Coss) 1.3 nF —
Reverse Transfer Capacitance (Crss) 55 pF —
Total Gate Charge (Qg) 90 nC —
工作结温 -55 °C to +175 °C -55 °C to +175 °C
封装 PG-TDSON-8 FL (5x6 mm) PG-TDSON-8-33 (5x6 mm)
安装类型 Surface Mount Surface Mount
RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Family — OptiMOS 6 40V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 120 A
脉冲漏极电流 — [DATA_NEEDED: pulsed I_D value]
R_DS(on) max @ V_GS=10V — 0.9 mΩ
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: V_GS(th) typical value]
Total Gate Charge Q_g typ — [DATA_NEEDED: Q_g typical]
Power Dissipation (Tc) — 150 W
Thermal Resistance R_thJC max — 1.0 K/W
Automotive Qualification — AEC-Q101
MSL 等级 — 1
Lead-Free / Halogen-Free — Yes (per Infineon product page)

数据手册与资源

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