ISC015N06NM5LF2ATMA1 vs IQEH54NE2LM7UCGATMA1 Comparación
Comparación detallada lado a lado de ISC015N06NM5LF2ATMA1 por Infineon y IQEH54NE2LM7UCGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 ✓ ActivoInfineon
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISC015N06NM5LF2ATMA1 | IQEH54NE2LM7UCGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,21 | $1,95 |
| Technology | OptiMOS 5 Linear FET 2 (N-Channel) | — |
| Drain-Source Voltage (VDS) | 60 V | 25 V |
| Continuous Drain Current (ID) at Ta | 32 A | 52 A |
| Pulsed Drain Current (IDM) at Tc | 275 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 217 W | — |
| On-Resistance RDS(on) max at VGS=10V | 1.55 mΩ | — |
| On-Resistance RDS(on) at VGS=10V (typ) | 1.3 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3 V | [DATA_NEEDED: VGS(th) typical/min/max] |
| Gate-Source Voltage Rating | ±20 V | — |
| Reverse Recovery Charge (Qrr) | 1.3 nC | — |
| Input Capacitance (Ciss) | 6.9 nF | — |
| Output Capacitance (Coss) | 1.3 nF | — |
| Reverse Transfer Capacitance (Crss) | 55 pF | — |
| Total Gate Charge (Qg) | 90 nC | [DATA_NEEDED: Qg typical in nC] |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-TDSON-8 FL (5x6 mm) | PG-TTFN-9-3 |
| Tipo de montaje | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc | — | 406 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 150 W |
| On-Resistance (RDS(on)) at 10V VGS | — | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] |
| Rango de temperatura de funcionamiento | — | -55C to +150C (typical MOSFET range) |
| Estado RoHS | — | Compliant |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |