ISC025N08NM5LF2ATMA1 vs ISZ028N03LF2SATMA1 Comparación
Comparación detallada lado a lado de ISC025N08NM5LF2ATMA1 por Infineon y ISZ028N03LF2SATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon
ISC025N08NM5LF2ATMA1 ✓ ActivoInfineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISC025N08NM5LF2ATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,74 | $0,49 |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide), OptiMOS 5 LF2 | StrongIRFET 2 (Trench MOSFET) |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) @ TA=25°C | 23 A | — |
| Continuous Drain Current (ID) @ TC=25°C | 198 A | — |
| On-Resistance (RDS(on)) Max | 2.55 mΩ | — |
| Gate-Source Threshold (VGS(th)) Max | 3.9 V | — |
| Total Gate Charge (Qg) Max | 96 nC | — |
| Power Dissipation @ TA | 3 W | — |
| Power Dissipation @ TC | 217 W | — |
| Encapsulado | PG-TDSON-8 FL (Surface Mount) | PG-TSDSON-8 FL (FL = flat lead) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -55C to +175C (junction, typical) |
| Polarity | N-Channel | — |
| Estado RoHS | Compliant | Compliant |
| Ordering Code Suffix | ATMA1 (Tape & Reel, 13-inch) | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 128 A |
| Continuous Drain Current (ID) at Ta | — | 22 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage (VGS(th)) | — | 2.35 V |
| On-Resistance (RDS(on)) max | — | 2.8 mΩ |
| Power Dissipation (Tc) | — | 83 W |
| Power Dissipation (Ta) | — | 3 W |
| Gate Drive Voltage (recommended) | — | 10 V (logic level at 4.5 V) |
| Nivel MSL | — | 1 |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |