ISC025N08NM5LF2ATMA1 vs ISZ028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC025N08NM5LF2ATMA1 by Infineon and ISZ028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC025N08NM5LF2ATMA1
ISC025N08NM5LF2ATMA1 - 80V 2.55mΞ© Linear FET MOSFET | Infineon
ISC025N08NM5LF2ATMA1 β ActiveInfineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC025N08NM5LF2ATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.74 | $0.49 |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide), OptiMOS 5 LF2 | StrongIRFET 2 (Trench MOSFET) |
| Drain-Source Voltage (VDS) Max | 80 V | β |
| Continuous Drain Current (ID) @ TA=25Β°C | 23 A | β |
| Continuous Drain Current (ID) @ TC=25Β°C | 198 A | β |
| On-Resistance (RDS(on)) Max | 2.55 mΞ© | β |
| Gate-Source Threshold (VGS(th)) Max | 3.9 V | β |
| Total Gate Charge (Qg) Max | 96 nC | β |
| Power Dissipation @ TA | 3 W | β |
| Power Dissipation @ TC | 217 W | β |
| Package | PG-TDSON-8 FL (Surface Mount) | PG-TSDSON-8 FL (FL = flat lead) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55C to +175C (junction, typical) |
| Polarity | N-Channel | β |
| RoHS Status | Compliant | Compliant |
| Ordering Code Suffix | ATMA1 (Tape & Reel, 13-inch) | β |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Tc | β | 128 A |
| Continuous Drain Current (ID) at Ta | β | 22 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage (VGS(th)) | β | 2.35 V |
| On-Resistance (RDS(on)) max | β | 2.8 mΞ© |
| Power Dissipation (Tc) | β | 83 W |
| Power Dissipation (Ta) | β | 3 W |
| Gate Drive Voltage (recommended) | β | 10 V (logic level at 4.5 V) |
| MSL Level | β | 1 |
| Avalanche Energy Rated | β | Yes (single-pulse) |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |