ISC025N08NM5LF2ATMA1 vs ISZ028N03LF2SATMA1 Comparison

Detailed side-by-side comparison of ISC025N08NM5LF2ATMA1 by Infineon and ISZ028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC025N08NM5LF2ATMA1 ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 ✓ Active

Specification Comparison

Parameter ISC025N08NM5LF2ATMA1 ISZ028N03LF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide), OptiMOS 5 LF2 StrongIRFET 2 (Trench MOSFET)
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) @ TA=25°C 23 A —
Continuous Drain Current (ID) @ TC=25°C 198 A —
On-Resistance (RDS(on)) Max 2.55 mΩ —
Gate-Source Threshold (VGS(th)) Max 3.9 V —
Total Gate Charge (Qg) Max 96 nC —
Power Dissipation @ TA 3 W —
Power Dissipation @ TC 217 W —
Package PG-TDSON-8 FL (Surface Mount) PG-TSDSON-8 FL (FL = flat lead)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: operating temperature range] -55C to +175C (junction, typical)
Polarity N-Channel —
RoHS Status Compliant Compliant
Ordering Code Suffix ATMA1 (Tape & Reel, 13-inch) —
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Tc — 128 A
Continuous Drain Current (ID) at Ta — 22 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (VGS(th)) — 2.35 V
On-Resistance (RDS(on)) max — 2.8 mΩ
Power Dissipation (Tc) — 83 W
Power Dissipation (Ta) — 3 W
Gate Drive Voltage (recommended) — 10 V (logic level at 4.5 V)
MSL Level — 1
Avalanche Energy Rated — Yes (single-pulse)
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]

Datasheets & Resources

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