ISC040N10NM7ATMA1 vs ISC028N03LF2SATMA1 Comparación
Comparación detallada lado a lado de ISC040N10NM7ATMA1 por Infineon y ISC028N03LF2SATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISC040N10NM7ATMA1 - 100V 130A OptiMOS 7 N-Channel MOSFET | Infineon
ISC040N10NM7ATMA1 ✓ ActivoInfineon
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISC040N10NM7ATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,92 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 5 30V |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 18 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 130 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta=25°C | 3 W | — |
| Power Dissipation (PD) at Tc=25°C | 150 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| RDS(on) @ VGS=10V | [DATA_NEEDED: RDS(on) max in mohm] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Encapsulado | PG-TDSON-8-34 (SSO8) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55°C to +175°C (TJ max) | — |
| Estado RoHS | Compliant | — |
| Nivel MSL | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 128 A |
| On-Resistance RDS(on) max at VGS=10V | — | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 2.35 V |
| Power Dissipation at TA | — | 3 W |
| Power Dissipation at TC | — | 83 W |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| RoHS / Lead-Free | — | Yes (RoHS compliant) |