ISC040N10NM7ATMA1 vs ISC028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC040N10NM7ATMA1 by Infineon and ISC028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC040N10NM7ATMA1 - 100V 130A OptiMOS 7 N-Channel MOSFET | Infineon
ISC040N10NM7ATMA1 β ActiveInfineon
ISC028N03LF2SATMA1
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC040N10NM7ATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 5 30V |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at Ta=25Β°C | 18 A | β |
| Continuous Drain Current (ID) at Tc=25Β°C | 130 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta=25Β°C | 3 W | β |
| Power Dissipation (PD) at Tc=25Β°C | 150 W | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| RDS(on) @ VGS=10V | [DATA_NEEDED: RDS(on) max in mohm] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | β |
| Package | PG-TDSON-8-34 (SSO8) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ max) | β |
| RoHS Status | Compliant | β |
| MSL Level | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 24 A |
| Continuous Drain Current (ID) at TC=25C | β | 128 A |
| On-Resistance RDS(on) max at VGS=10V | β | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 2.35 V |
| Power Dissipation at TA | β | 3 W |
| Power Dissipation at TC | β | 83 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| RoHS / Lead-Free | β | Yes (RoHS compliant) |