ISC080N10NM6ATMA1 vs BSC060N10NS3GATMA1 Comparación
Comparación detallada lado a lado de ISC080N10NM6ATMA1 por Infineon y BSC060N10NS3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | ISC080N10NM6ATMA1 | BSC060N10NS3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,05 | $0,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 6 100V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at Ta | 13 A | — |
| Continuous Drain Current (ID) at Tc | 75 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 µA | — |
| Encapsulado | PG-TDSON-8 FL (TDSON EP) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55°C to +175°C (TJ max, per datasheet) | — |
| Nivel MSL | 1 (per JEDEC J-STD-020, per datasheet) | [DATA_NEEDED: MSL rating] |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Sin halógenos | Yes | [DATA_NEEDED: halogen status] |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | — |
| Part Family | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Ta) | — | 14.9 A |
| Continuous Drain Current (ID, Tc) | — | 90 A |
| On-Resistance RDS(on) Max @ VGS=10V | — | 6 mOhm |
| Power Dissipation (PD, Tc=25C) | — | 125 W |
| Gate Threshold Voltage VGS(th) | — | 2.0 V to 3.5 V |
| Temperatura de unión de funcionamiento | — | -55 C to +150 C |
| Technology | — | OptiMOS 3 (Trench MOSFET) |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg value] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss value] |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS value] |