ISC080N10NM6ATMA1 vs BSC060N10NS3GATMA1 Comparison
Detailed side-by-side comparison of ISC080N10NM6ATMA1 by Infineon and BSC060N10NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
ISC080N10NM6ATMA1 β ActiveInfineon
BSC060N10NS3GATMA1
BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon
BSC060N10NS3GATMA1 β ActiveSpecification Comparison
| Parameter | ISC080N10NM6ATMA1 | BSC060N10NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOSβ’ 6 100V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 100 V | β |
| Continuous Drain Current (ID) at Ta | 13 A | β |
| Continuous Drain Current (ID) at Tc | 75 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 100 W | β |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 Β΅A | β |
| Package | PG-TDSON-8 FL (TDSON EP) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ max, per datasheet) | β |
| MSL Level | 1 (per JEDEC J-STD-020, per datasheet) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | [DATA_NEEDED: halogen status] |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | β |
| Part Family | β | OptiMOS 3 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, Ta) | β | 14.9 A |
| Continuous Drain Current (ID, Tc) | β | 90 A |
| On-Resistance RDS(on) Max @ VGS=10V | β | 6 mOhm |
| Power Dissipation (PD, Tc=25C) | β | 125 W |
| Gate Threshold Voltage VGS(th) | β | 2.0 V to 3.5 V |
| Operating Junction Temperature | β | -55 C to +150 C |
| Technology | β | OptiMOS 3 (Trench MOSFET) |
| Gate Charge (Qg, typ) | β | [DATA_NEEDED: Qg value] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss value] |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS value] |