ISK057N04LM6ATLA1 vs IAUZ30N08S5N186ATMA1 Comparación
Comparación detallada lado a lado de ISK057N04LM6ATLA1 por Infineon y IAUZ30N08S5N186ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISK057N04LM6ATLA1 | IAUZ30N08S5N186ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,52 | $0,48 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | Trench (OptiMOS 6) | OptiMOS 5 N-Channel Power MOSFET (trench) |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc | 64 A | — |
| Continuous Drain Current (ID) at Ta | [DATA_NEEDED: ID at TA=25C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| RDS(on) typical at VGS=10V | 5.7 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Gate Charge (Qg total) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 39.1 W | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C | -55 °C to +175 °C (automotive) |
| Encapsulado / Carcasa | PG-VSON-6-1 (PQFN 2x2) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | [DATA_NEEDED: MSL rating] |
| Packaging | Tape & Reel (TR) | — |
| DigiKey Part Number | 448-ISK057N04LM6ATLA1TR-ND | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tj) | — | 30 A |
| Power Dissipation (PD, Tc) | — | 41 W |
| On-State Resistance (RDS(on)) | — | 18.6 mΩ (typical, VGS = 10 V) |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Encapsulado | — | PG-TSDSON-8-32 (5x6 mm) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |