ISK057N04LM6ATLA1 vs IAUZ30N08S5N186ATMA1 Comparaison
Comparaison détaillée côte à côte de ISK057N04LM6ATLA1 par Infineon et IAUZ30N08S5N186ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | ISK057N04LM6ATLA1 | IAUZ30N08S5N186ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,52 | $0,48 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| Type de transistor | N-Channel MOSFET | — |
| Technology | Trench (OptiMOS 6) | OptiMOS 5 N-Channel Power MOSFET (trench) |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc | 64 A | — |
| Continuous Drain Current (ID) at Ta | [DATA_NEEDED: ID at TA=25C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| RDS(on) typical at VGS=10V | 5.7 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Gate Charge (Qg total) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 39.1 W | — |
| Plage de température de fonctionnement | -55 °C to +150 °C | -55 °C to +175 °C (automotive) |
| Boîtier / Format | PG-VSON-6-1 (PQFN 2x2) | — |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 1 | [DATA_NEEDED: MSL rating] |
| Packaging | Tape & Reel (TR) | — |
| DigiKey Part Number | 448-ISK057N04LM6ATLA1TR-ND | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tj) | — | 30 A |
| Power Dissipation (PD, Tc) | — | 41 W |
| On-State Resistance (RDS(on)) | — | 18.6 mΩ (typical, VGS = 10 V) |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Boîtier | — | PG-TSDSON-8-32 (5x6 mm) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |