ISZ230N10NM6ATMA1 vs IPT60R050G7XTMA1 Comparación
Comparación detallada lado a lado de ISZ230N10NM6ATMA1 por Infineon y IPT60R050G7XTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | ISZ230N10NM6ATMA1 | IPT60R050G7XTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,71 | $1,62 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (Ta) | 7.7 A | — |
| Continuous Drain Current (Tc) | 31 A | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 48 W | — |
| On-Resistance RDS(on) at VGS=10V | 23 mΩ (typ, ID=10A) | — |
| Gate Threshold Voltage VGS(th) | 3.3 V (typ at 13 µA) | — |
| Technology | OptiMOS 6 trench MOSFET | Superjunction N-Channel MOSFET |
| Encapsulado | PG-TSDSON-8 FL (3.3 x 3.3 mm) | PG-HSOF-8-2 (TO-Leadless / TOLL) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C (junction) | -55C to +150C |
| Gate Drive Voltage (recommended) | 10 V | — |
| Nivel MSL | MSL1 (per JEDEC J-STD-020) | — |
| Estado RoHS | Compliant | Compliant |
| Family | OptiMOS 6 (100V class) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS G7 (C7 Gold) |
| Polarity | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 600 V |
| Continuous Drain Current (Id) at Tc=25C | — | 44 A |
| Drain-Source On-Resistance (Rds(on)) max | — | 50 mOhm |
| Maximum Power Dissipation (Pd) at Tc=25C | — | 245 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg typ value] |
| Kelvin Source Pin | — | Yes (pin 8) |