ISZ230N10NM6ATMA1 vs IPT60R050G7XTMA1 Comparison

Detailed side-by-side comparison of ISZ230N10NM6ATMA1 by Infineon and IPT60R050G7XTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISZ230N10NM6ATMA1

ISZ230N10NM6ATMA1 - 100V 31A OptiMOS 6 N-MOSFET | Infineon

ISZ230N10NM6ATMA1 βœ“ Active
Infineon
IPT60R050G7XTMA1

IPT60R050G7XTMA1 - 600V 44A 50mΞ© CoolMOS G7 MOSFET | Infineon

IPT60R050G7XTMA1 βœ“ Active

Specification Comparison

Parameter ISZ230N10NM6ATMA1 IPT60R050G7XTMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.71 $1.62
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (Ta) 7.7 A β€”
Continuous Drain Current (Tc) 31 A β€”
Power Dissipation (Ta) 3 W β€”
Power Dissipation (Tc) 48 W β€”
On-Resistance RDS(on) at VGS=10V 23 mΞ© (typ, ID=10A) β€”
Gate Threshold Voltage VGS(th) 3.3 V (typ at 13 Β΅A) β€”
Technology OptiMOS 6 trench MOSFET Superjunction N-Channel MOSFET
Package PG-TSDSON-8 FL (3.3 x 3.3 mm) PG-HSOF-8-2 (TO-Leadless / TOLL)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +150 Β°C (junction) -55C to +150C
Gate Drive Voltage (recommended) 10 V β€”
MSL Level MSL1 (per JEDEC J-STD-020) β€”
RoHS Status Compliant Compliant
Family OptiMOS 6 (100V class) β€”
Manufacturer β€” Infineon Technologies
Series β€” CoolMOS G7 (C7 Gold)
Polarity β€” N-Channel
Drain-Source Voltage (Vdss) β€” 600 V
Continuous Drain Current (Id) at Tc=25C β€” 44 A
Drain-Source On-Resistance (Rds(on)) max β€” 50 mOhm
Maximum Power Dissipation (Pd) at Tc=25C β€” 245 W
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) typ β€” [DATA_NEEDED: Qg typ value]
Kelvin Source Pin β€” Yes (pin 8)

Datasheets & Resources

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