ITS716GFUMA1 vs ITS4200SSJDXUMA1 Comparación
Comparación detallada lado a lado de ITS716GFUMA1 por Infineon y ITS4200SSJDXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | ITS716GFUMA1 | ITS4200SSJDXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,22 | $0,98 |
| Product Type | Smart High-Side Power Switch | — |
| Number of Channels | 4 | — |
| Configuración de salida | High-side (N-Channel MOSFET) | Single high-side switch |
| Continuous Current per Channel | 2.3 A | — |
| On-State Resistance (RON) per Channel | [DATA_NEEDED: Ron typical value] | — |
| Operating Voltage Range (Vbb) | 5 V to 36 V | — |
| Load Dump Tolerance | Up to 45 V | — |
| Standby Current | [DATA_NEEDED: Iq standby typical] | — |
| Input Logic Levels | CMOS/TTL compatible, parallel interface | — |
| Diagnostic Output | Open-drain fault flag, one per channel | Status pin for fault feedback |
| Protection Features | Overload, short-circuit, over-temperature, over-voltage, ESD | Overload, current limit, short circuit, thermal shutdown with restart, overvoltage (load dump), undervoltage shutdown |
| PWM Capability | Up to 1 kHz | — |
| Rango de temperatura de funcionamiento | -40 C to +85 C (industrial grade) | — |
| Encapsulado | PG-DSO-20-32 (20-pin SOIC, exposed pad) | PG-DSO-8 (DSO-8) |
| Resistencia térmica, unión a ambiente | [DATA_NEEDED: theta_JA value] | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | PROFET (MINI-PROFET) |
| Switch Type | — | High-Side N-Channel, 1:1 |
| On-State Resistance (R_DS(on)) | — | 200 mOhm (typical) |
| Continuous Load Current | — | 1.2 A |
| Supply Voltage (Vbb) | — | 6 V to 52 V |
| Corriente en reposo | — | 0.8 mA |
| Maximum Power Dissipation | — | 1400 mW |
| Temperatura de funcionamiento | — | -40 C to +150 C |
| Load Type | — | Resistive and inductive loads |