IXDH20N120 vs IXDH20N120D1 Comparación
Comparación detallada lado a lado de IXDH20N120 por Littelfuse y IXDH20N120D1 por Littelfuse. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Littelfuse
IXDH20N120D1 - 1200V 38A NPT IGBT with Diode | TO-247AD | Littelfuse
IXDH20N120D1 ✓ ActivoComparación de especificaciones
| Parámetro | IXDH20N120 | IXDH20N120D1 |
|---|---|---|
| Marca | Littelfuse | Littelfuse |
| Categoría | IGBTs | IGBTs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $5,20 | $3,30 |
| Manufacturer | IXYS (acquired by Littelfuse) | — |
| Part Number | IXDH20N120 | — |
| Device Type | NPT (Non-Punch Through) IGBT | — |
| Collector-Emitter Voltage (VCES) | 1200 V | 1200 V |
| Continuous Collector Current (IC25) | 38 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: pulsed collector current 1 ms] | [DATA_NEEDED: ICM value] |
| Gate-Emitter Voltage (VGES, continuous) | +/- 20 V | — |
| Gate-Emitter Voltage (VGEM, transient) | [DATA_NEEDED: VGEM transient rating] | — |
| Power Dissipation (PC) | 200 W | — |
| Junction Temperature (TJ) | -40C to +150C [DATA_NEEDED: max TJ] | — |
| Storage Temperature (Tstg) | [DATA_NEEDED: storage temperature range] | -55 C to +150 C |
| RBSOA | Square (no latch-up) at VGE = 15 V, Rg = 20 ohm, TJ up to 150 C | Square RBSOA at 1200 V / 38 A (snubberless hard switching) |
| Short-Circuit Withstand (tSC) | 10 us minimum at VCE = VCES, VGE = +/- 15 V, TC = 25 C [DATA_NEEDED: exact value] | — |
| Diode Option | Optional ultra-fast FRED (D1 suffix variant: IXDH20N120D1) | — |
| Tipo de montaje | Through Hole | Through Hole |
| Encapsulado | TO-247AD (3-lead) | — |
| Estado RoHS | ROHS3 Compliant | Compliant |
| Operating Mode | N-Channel IGBT | — |
| Polarity | — | N-Channel |
| Technology | — | NPT (Non-Punch Through) IGBT with co-packaged FRED |
| Gate-Emitter Voltage (VGES) | — | +/- 20 V |
| Continuous Collector Current IC25 | — | 38 A (at TC = 25 C) |
| Continuous Collector Current IC90 | — | [DATA_NEEDED: IC90 value] |
| Maximum Power Dissipation (PC) | — | 200 W |
| Tensión de saturación colector-emisor (Vce(sat)) | — | 3.0 V typ at IC = 20 A |
| Gate Threshold Voltage (VGE(th)) | — | [DATA_NEEDED: VGE(th) value] |
| Short Circuit Withstand Time (tSC) | — | [DATA_NEEDED: tSC value] |
| Operating Junction Temperature (TJ) | — | -55 C to +150 C |
| Package Type | — | TO-247AD (3-pin with tab) |
| Integrated Diode | — | Yes - co-packaged FRED (D1 variant) |