IXDH20N120 vs IXDH20N120D1 Comparaison
Comparaison détaillée côte à côte de IXDH20N120 par Littelfuse et IXDH20N120D1 par Littelfuse. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Littelfuse
IXDH20N120D1 - 1200V 38A NPT IGBT with Diode | TO-247AD | Littelfuse
IXDH20N120D1 ✓ ActifComparaison des spécifications
| Paramètre | IXDH20N120 | IXDH20N120D1 |
|---|---|---|
| Marque | Littelfuse | Littelfuse |
| Catégorie | IGBTs | IGBTs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $5,20 | $3,30 |
| Manufacturer | IXYS (acquired by Littelfuse) | — |
| Part Number | IXDH20N120 | — |
| Device Type | NPT (Non-Punch Through) IGBT | — |
| Collector-Emitter Voltage (VCES) | 1200 V | 1200 V |
| Continuous Collector Current (IC25) | 38 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: pulsed collector current 1 ms] | [DATA_NEEDED: ICM value] |
| Gate-Emitter Voltage (VGES, continuous) | +/- 20 V | — |
| Gate-Emitter Voltage (VGEM, transient) | [DATA_NEEDED: VGEM transient rating] | — |
| Power Dissipation (PC) | 200 W | — |
| Junction Temperature (TJ) | -40C to +150C [DATA_NEEDED: max TJ] | — |
| Storage Temperature (Tstg) | [DATA_NEEDED: storage temperature range] | -55 C to +150 C |
| RBSOA | Square (no latch-up) at VGE = 15 V, Rg = 20 ohm, TJ up to 150 C | Square RBSOA at 1200 V / 38 A (snubberless hard switching) |
| Short-Circuit Withstand (tSC) | 10 us minimum at VCE = VCES, VGE = +/- 15 V, TC = 25 C [DATA_NEEDED: exact value] | — |
| Diode Option | Optional ultra-fast FRED (D1 suffix variant: IXDH20N120D1) | — |
| Type de montage | Through Hole | Through Hole |
| Boîtier | TO-247AD (3-lead) | — |
| Statut RoHS | ROHS3 Compliant | Compliant |
| Operating Mode | N-Channel IGBT | — |
| Polarity | — | N-Channel |
| Technology | — | NPT (Non-Punch Through) IGBT with co-packaged FRED |
| Gate-Emitter Voltage (VGES) | — | +/- 20 V |
| Continuous Collector Current IC25 | — | 38 A (at TC = 25 C) |
| Continuous Collector Current IC90 | — | [DATA_NEEDED: IC90 value] |
| Maximum Power Dissipation (PC) | — | 200 W |
| Tension de saturation collecteur-émetteur (Vce(sat)) | — | 3.0 V typ at IC = 20 A |
| Gate Threshold Voltage (VGE(th)) | — | [DATA_NEEDED: VGE(th) value] |
| Short Circuit Withstand Time (tSC) | — | [DATA_NEEDED: tSC value] |
| Operating Junction Temperature (TJ) | — | -55 C to +150 C |
| Package Type | — | TO-247AD (3-pin with tab) |
| Integrated Diode | — | Yes - co-packaged FRED (D1 variant) |