JMTG100N06A vs BSC0901NSATMA1 Comparación
Comparación detallada lado a lado de JMTG100N06A por Jiejie Micro y BSC0901NSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | JMTG100N06A | BSC0901NSATMA1 |
|---|---|---|
| Marca | Jiejie Micro | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,15 | $0,78 |
| Manufacturer | Jiangsu JieJie Microelectronics Co., Ltd | Infineon Technologies |
| Tipo de transistor | N-Channel Power Trench MOSFET | — |
| Drain-Source Voltage V(DSS) | 60 V | — |
| Continuous Drain Current I(D) | 55 A (at V(GS)=10 V, T(C)=25 °C) | — |
| R(DS(on)) Typ @ V(GS)=10 V | 7.7 mΩ | — |
| R(DS(on)) Typ @ V(GS)=4.5 V | 8.9 mΩ | — |
| Gate Threshold Voltage V(GS(th)) Typ | 1.5 V | — |
| Encapsulado | PDFN5x6-8L (Power DFN 5×6 mm, 8 leads) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Tipo de montaje | Surface Mount | Surface Mount |
| Plating | Pb-free | — |
| Sin halógenos | Yes | — |
| RoHS | Compliant | — |
| UIS (Avalanche) Tested | 100 % | — |
| V(DS) Tested | 100 % | — |
| EAS Test Condition | T(J)=25 °C, V(DD)=30 V, V(G)=10 V, L=0.5 mH, R(g)=25 Ω, I(AS)=22 A | — |
| Primary Applications | Load Switch, PWM, DC-DC, Motor Drive | — |
| Part Family | — | OptiMOS 30V |
| Technology | — | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Rango de temperatura de funcionamiento | — | -55C to +150C |
| Nivel de sensibilidad a la humedad (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Estado RoHS | — | Compliant |
| Configuration | — | Single N-Channel with Built-in Diode |